These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with 5V threshold voltage. The same as the previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp. 

Features

1,200V VDS rating
Low RDS(on) from 23mΩ to 70mΩ
Best-in-class Figures of Merit (FoM)
RDS x Area
RDS(on) x Coss,tr
RDS(on) x Eoss
RDS(on) x Qg
Safely driven with standard 0V to 12V or 15V gate drive voltage
Excellent threshold noise margin maintained with 5V threshold voltage
Operates with all Si IGBT, Si MOSFET and SiC MOSFET drive voltages
Built-in ESD gate protection clamp
Industry-standard TO-247-3L and TO-247-4L (Kelvin) packages